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| APM2054NV N-Channel Enhancement Mode MOSFET Features * 20V/5A, RDS(ON)= 35m (typ.) @ VGS= 10V RDS(ON)= 45m (typ.) @ VGS= 4.5V RDS(ON)= 110m (typ.) @ VGS= 2.5V Pin Description * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-223 (2) D Applications * * Switching Regulators Switching Converters (1) G S (3) N-Channel MOSFET Ordering and Marking Information APM2054N Lead Free Code Handling Code Temp. Range Package Code Package Code V : SOT-223 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2054N V : APM2054N XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1 www.anpec.com.tw APM2054NV Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol VDSS VGSS I D* IDM * I S* TJ T STG P D* RJA* Note: *Surface Mounted on 1in pad area, t 10sec. 2 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient T A=25C T A=100C V GS=10V Rating 20 16 5 20 3 150 -55 to 150 1.47 0.58 85 Unit V A A C W C/W Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Static Characteristics BVDSS IDSS V GS(th) IGSS RDS(ON) VSD a a Parameter Test Condition APM2054NV Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250A VDS=16V, V GS=0V T J=85C VDS=VGS, I DS=250A VGS=16V, VDS=0V VGS=10V, IDS=5A VGS=4.5V, I DS=3.5A VGS=2.5V, I DS=2.5A ISD =3A, V GS=0V 20 1 30 0.6 0.9 35 45 110 0.85 1.5 100 40 54 130 1.3 V A V nA m Diode Forward Voltage V Gate Charge Characteristics b Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=10V, V GS=4.5V, IDS=6A 11 3.8 5.2 13 nC Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 2 www.anpec.com.tw APM2054NV Electrical Characteristics (Cont.) (TA = 25C unless otherwise noted) Symbol Parameter Test Condition APM2054NV Min. Typ. Max. Unit Dynamic Characteristics b td(ON) Tr td(OFF) Tf RG Ciss Coss Crss Notes: a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=20V, Frequency=1.0MHz VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 7 15 19 6 2.5 450 100 60 10 25 26 7 pF ns Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 3 www.anpec.com.tw APM2054NV Typical Characteristics Power Dissipation 1.6 1.4 1.2 Drain Current 6 5 ID - Drain Current (A) Ptot - Power (W) 4 1.0 0.8 0.6 0.4 0.2 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 3 2 1 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o 0 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 ID - Drain Current (A) 10 it Lim n) s(o Rd 0.2 0.1 300s 1ms 0.1 0.02 0.01 0.05 1 10ms 100ms 1s 0.01 Single Pulse Mounted on 1in pad o RJA :85 C/W 2 0.1 DC T =25 C 0.01 A 0.1 o 1 10 60 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 4 www.anpec.com.tw APM2054NV Typical Characteristics (Cont.) Output Characteristics 20 18 16 VGS= 4, 5, 6, 7, 8, 9, 10V 140 160 VGS=2.5V Drain-Source On Resistance RDS(ON) - On - Resistance (m) 120 100 80 60 40 20 0 ID - Drain Current (A) 14 12 10 8 6 4 2 0 0 2 4 2V 6 8 10 3V VGS=4.5V VGS=10V 0 4 8 12 16 20 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 20 18 16 1.6 Gate Threshold Voltage IDS =250A Normalized Threshold Vlotage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 ID - Drain Current (A) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 Tj=25 C o Tj=125 C Tj=-55 C o o 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 5 www.anpec.com.tw APM2054NV Typical Characteristics (Cont.) Drain-Source On Resistance 2.4 2.2 VGS = 10V IDS = 5A 10 Tj=150 C o Source-Drain Diode Forward 20 Normalized On Resistance 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IS - Source Current (A) Tj=25 C o RON@Tj=25 C: 35m 0 25 50 75 100 125 150 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o 0.0 -50 -25 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 700 Frequency=1MHz 9 10 VDS=10V ID = 5A Gate Charge 600 500 400 300 200 Coss 100 0 Crss VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 24 C - Capacitance (pF) Ciss 0 4 8 12 16 20 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 6 www.anpec.com.tw APM2054NV Packaging Information SOT-89 (Reference EIAJ ED-7500A Registration SC-62) D D1 H E 1 L C B1 e e1 B 2 3 A Dim A B B1 C D D1 e e1 E H L Millimeters Min. 1.40 0.40 0.35 0.35 4.40 1.35 1.50 BSC 3.00 BSC 2.29 3.75 0.80 2.60 4.25 1.20 10 0.090 0.148 0.031 Max. 1.60 0.56 0.48 0.44 4.60 1.83 Min. 0.055 0.016 0.014 0.014 0.173 0.053 Inches Max. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 BSC 0.102 0.167 0.047 10 Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 7 www.anpec.com.tw APM2054NV Packaging Information SOT-223 (Reference JEDEC Registration SOT-223) 3.3 [0.132] 1.5 [0.06] D B 1 A c 6.3 [0.252] 1.5 TYP [0.06] 2.3 [0.092] H E L K e e 1 A 1 1 TYP [0.04] LAND PATTERN RECOMMENDATION B CONTROLLING DIMENSION IS MILLIMETERS VALUES IN [ ] ARE INCH Dim A A1 B B1 c D e e1 H L K Millimeters Min. 1.50 0.02 0.60 2.90 0.28 6.30 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0 13 8 Inches Max. 1.80 0.08 0.80 3.10 0.32 6.70 A A1 B B1 c D 0.09 BSC 0.18 BSC 7.30 1.10 2.00 10 H L K 13 www.anpec.com.tw Min. 1.50 0.02 0.60 2.90 0.28 6.30 6.70 0.91 1.50 0 Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 APM2054NV Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. 9 www.anpec.com.tw Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 APM2054NV Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 10 www.anpec.com.tw APM2054NV Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 J 2 0.5 Po T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 1.5 0.25 4.0 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 11 www.anpec.com.tw |
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